MRAM's inherent low resistance was bypassed using a 64 x 64 crossbar array of MRAM cells that also support in-memory processing capabilities, making it highly effective for AI-powered applications. More complex MRAM structures could eventually be used to store biological neuronal networks.
https://www.notebookcheck.net/Samsung-researchers-bypass-the-low-resistance-nature-of-MRAM-and-add-in-memory-processing-capabilities.592586.0.html