Samsung will be the first company to implement Gate-All-Around transistors (known as MBCFET) with its upcoming 3 nm node scheduled to go online in the first half of 2022. A second gen 3 nm node is planned for 2023, while the 2 nm node should be ready by 2025. TSMC, on the other hand, will only adopt GAA technology with its 2 nm nodes scheduled for 2024.
https://www.notebookcheck.net/Samsung-presents-updated-roadmap-for-its-upcoming-3-nm-and-2-nm-production-nodes.570479.0.html
QuoteAs the first node to use MBCFET, Samsung's 3 nm fabrication process is said to decrease logic area by 35%, while improving performance by 30% and also lowering power requirements by 50% compared to the current 5 nm node.
'And also'? Really? Don't you know, by know, that it has
always been 'or' rather than 'and'? ???