Today (February 4, 2020) Samsung has unveiled its latest memory solution for the high-performance computing (HPC) market. It is a form of state-of-the-art high bandwidth memory 2E (HBM2E) with 16GB of capacity per chip. This doubles the specification of its previous generation, and is owed to its new DRAM die layout.
https://www.notebookcheck.net/Samsung-debuts-Flashbolt-its-latest-and-highest-capacity-generation-of-HBM2E-memory.452973.0.html