SK Hynix starts mass production for 238-Layer 4D NAND memory, 20% faster PCIe 5.0 NVMe SSDs coming soon

[Redaktion]

The improved memory chips can deliver up to 50% increased transfer speeds over the previous 176-layer models. With speeds reaching 2.4 Gbps per chip, a PCIe 5.0 NVMe SSD would be able to hit 14 GB/s read and write speeds.

https://www.notebookcheck.net/SK-Hynix-starts-mass-production-for-238-Layer-4D-NAND-memory-20-faster-PCIe-5-0-NVMe-SSDs-coming-soon.724571.0.html

[NikoB]

This is all fraud and deception of illiterate technical buyers, of whom the vast majority. In reality, 176L NAND cannot write in constant mode outside the SLC cache faster than 500-600Mb / s in ordinary bufferless SSDs (which is the level of the outdated SATA3) and if they promise + 50% for the new technical process, this gives only shameful 750Mb / s .

These figures have long been proven in tests of the bufferless WD Blue with 176L memory.

In reality, outside the cache, even eight-channel access gives at best 1.5-2Gb / s, there will not even be any 4 Gb / s there. Those. the real write speed outside the SLC cache will be 3-15 times worse than what the rogue marketers write in the characteristics of pci-e 5.0 drives.

At the same time, pci-e 5.0 drives, due to poor technical process, get very hot and require large radiators with active cooling, which excludes their use in laptops.

And most importantly, their use with a RAM bandwidth of 60-80Gb / s makes them completely meaningless.

Such drives are absolutely not suitable for any x86 variants, but only make sense on the Apple platform, because. so the memory controller is 3-5 times faster than the fastest x86 controllers. That's where pci-e 5.0 ssds will give a noticeable advantage, but only when they do not require active cooling, i.e. not earlier than 2nm technical process.